A stateoftheart overview of high k dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Request pdf on aug 23, 2012, fuchien chiu and others published high k gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. Gang he is professor at the school of physics and materials science of the anhui university, china. High k gate dielectrics for future cmos technology t. Electrical characterization of highk dielectric gates for. A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological. Request pdf highk gate dielectrics for cmos technology a stateoftheart. Highk gate dielectrics for cmos technology request pdf. In general, dielectric breakdown mechanisms in amorphous films can be categorized as either intrinsic or extrinsic in nature he and sun, high k gate dielectrics for cmos technology, 2012, p. His research interests and efforts cover the areas of the preparation, characterization, fundamental understanding and associated applications of high k gate dielectric thin films. Advanced metal gatehighk dielectric stacks for high. Highk gate dielectrics for cmos technology download. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing.
As such, the book clearly discusses the advantages of these materials over. This is primarily because the ewf of a polysihighk dielectric stack is. Highk gate dielectrics for cmos technology semantic scholar. Thus, the physical thickness of an alternative highk dielectric employed to.
The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials. Dielectric materials for microelectronics springerlink. The continuous miniaturization of complementary metaloxidesemiconductor cmos technologies has led to unacceptable tunneling current leakage levels for. The resulting metal gate high k dielectric stacks have i equivalent oxide thickness eot of 1. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration. Request pdf on aug 23, 2012, shijie wang and others published high k gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. High k gate dielectrics for cmos technology 9783527330324. Scaling trend of gate oxide thickness over the past five technology generations from the 0. Gate stack technology for nanoscale devices sciencedirect. High permittivity gate dielectric materials springerlink. Nevertheless, for planar cmos technology through the 90 nm node, it has been noted. Afanasev and others published high k gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. Ma yale university, center for microelectronics, and department of electrical engineering new haven, ct 065208284 introduction high k dielectrics are being actively pursued by the semiconductor industry to replace sio2 as the gate dielectric for future generations of cmos transistors.